Radiation Tolerant Silicon Detectors

The Solid State Detector (SSD) team is developing radiation tolerant silicon sensors in the framework of the RD50 collaboration and the CMS Phase II Tracker upgrade group. Within the RD50 collaboration (47 institutions, 260 members) the SSD team is participating in several research projects aiming to develop radiation tolerant silicon sensors for the vertex and tracking detectors for the luminosity upgrade of LHC. Furthermore, the team is significantly contributing to the steering and administration of the collaboration by providing a co-spokespersons, administrative support and the management of several RD50 common projects. Within the CMS collaboration, the team is contributing to the development and characterization campaign of the tracker phase II sensors.The team holds profound expertise in all issues related to radiation damage in semiconductor devices and in particular on experimental techniques to characterize radiation damaged devices using radioactive sources and pulsed lasers.

Title Description Location
ALIBAVA setup
  • bias up to 1100V
  • ALIBAVA system (LHCb Beetle based)
  • wide bandwidth amplifiers (up to 3 channel)
  • front and back illumination of sample
  • 1 GHz Oscilloscope
  • ps lasers (660nm, 1060nm)
  • software (linux,root) for ALIBAVA
  • cooing down to -20C
28/2-019
CCE measurement setup at low temperatures
  • Sr-90 source, scintillator/PMT trigger
  • amplifier with 2.5 us shaping (single channel)
  • cooling down to -20C
28/2-019
CVIV setup: Measurement at room temperature
  • Labview control
  • Bias up to 1100V
  • CV at 0.1, 1, 10, 100 KHz
  • Probe station with 4 inch chuck in dark box
28/2-019
CVIV setup: Measurement with temperature control
  • Labview control
  • Bias up to 1100V
  • CV at 0.1, 1, 10, 100 KHz
  • Probe station with 4 inch chuck in dark box
  • Temperature control from -30C – 60C
28/2-019
eTCT setup
  • labview control
  • 1060 nm lasers (1 ns pulse)
  • edge illumination of sample
  • 500 MHz Oscilloscope
  • wide band width amplifier (single channel)
  • bias up to 1100V
  • cooling down to -20C, dark box, dry air flushed
28/2-019
TCT & setup
  • labview control
  • 660 & 1060 nm lasers (1 ns pulse)
  • Front, back edge illumination of sample
  • 500 MHz Oscilloscope
  • wide band width amplifier (single channel)
  • bias up to 1100V
  • cooling down to -20C, dark box, dry air flushed
186/R-G25
TCTPlus setup
  • labview control
  • 660 & 1060 nm lasers (1 ns pulse)
  • front and back illumination of sample
  • 500 MHz Oscilloscope
  • wide band width amplifier (single channel)
  • bias up to 1100V
  • cooling down to -10C, dark box, dry air flushed
186/R-G2
TPA Setup
  • Optical table THORLABS
  • Faraday cage
  • FYLA Laser
  • Laser output properties
    Approx. 400fs width
    Pulse frequency 8 MHz to single pulse
    Central wavelength 1550nm

  • Hexapod Newport 6 axis motorized
  • Oscilloscope Infiniium DS09254A
  • 2 Keithley Source Meter
  • TTi Programmable DC PSU (TSX3510P)
  • KEYSIGHT Power Supply E3651A
  • Chiller Huber CC505 (-40°C)
186/R-G25