Sensor Catalogue
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(DATA COMPILATION OF SOLID-STATE SENSORS FOR RADIATION MONITORING)
by
Federico Ravotti, Maurice Glaser and Michael Moll
In the framework of the PH-RADMON project, the Irradiation Facilities team within the PH-DT group supplies integrated sensor boards and single dosimeter devices (RadFETs, p‐i‐n diodes, GaF films, High Level Dosimetry samples, etc.) to the CERN experiments but also for utilization in external irradiation facilities and projects. This page lists in a form of “CATALOGUE” the available dosimeters and radiation monitoring devices together with a description of their main characteristics.
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TABLE OF CONTENTS
| Page | |
| Introduction | 3 |
|
Review Of The Presented Solid-State Dosimetric Technologies |
|
|
Radiation-sensitive Field Effect Transistors (RadFETs) |
4 |
|
Forward and Reverse biased p-i-n silicon diodes |
5 |
|
Thin-Oxide RadFET [R.E.M.] |
7 |
|
Thick-Oxide RadFET [CNRS-LAAS] |
14 |
|
High-sensitivity Silicon Diode [CMRP] |
19 |
|
BPW 34F Silicon Diode [OSRAM, SIEMENS] |
23 |
|
Particle-Detector Diode [ST-Microelectronics] |
28 |
|
APPENDIX: R.E.M. RadFETs Procurement Specifications |
32 |
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Standard Integrated RadFETs Packaging 36LD Chip Carrier
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Main Characteristics (PDF)
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Integrated Sensor PCB
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CATALOGUE VERSIONS HISTORY
|
DATE |
VERSION | COMMENTS |
| 01/03/05 | 3.0 | First Draft Version Published |
| 04/03/05 | 3.1 | First Released Version |
| 15/03/05 | 3.2 | Add mask LAAS devices + REM Temperature Coefficients |
| 13/05/05 | Sensor Catalogue published as CERN TS-Note-2005-002 | |
| 27/06/05 | First version of Standard RADMON Packaging | |
| 10/08/06 | Connectivity details Integrated sensor PCB |